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NTE283 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Horizontal Output, Switch | |||
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NTE283
Silicon NPN Transistor
Horizontal Output, Switch
Description:
The NTE283 is a silicon NPN transistor in a TO3 type package designed for highâvoltage, highâ
speed, power switching in inductive circuits where fall time is critical. Typical applications include
switching regulators, PWM inverters, solenoid and relay drivers.
Absolute Maximum Ratings:
CollectorâEmitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V
CollectorâEmitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (tp ⤠10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Total Power Dissipation (TC ⤠+25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65° to +200°C
Thermal Resistance, JunctionâtoâCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
CollectorâBase Voltage
CollectorâEmitter Sustaining Voltage
CollectorâEmitter Saturation Voltage
BaseâEmitter Saturation Voltage
DC Current Gain
Current GainâBandwidth Product
Second Breakdown Collector Current
ICES
IEBO
VCBO
VCEO(su
s)
VCE(sat)
VBE(sat)
hFE
fT
IS/b
VCEV = 800V, VBE = 0
VEB = 8V, IC = 0
IC = 1mA, IE = 0
IC = 100mA, IB = 0, Note 1
IC = 8A, IB = 2.5A, Note 1
IC = 8A, IB = 2.5A, Note 1
VCE = 10V, IC = 2.5A, Note 1
VCE = 10V, IC = 500mA
VCE = 25V, Note 2
Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle = 1.5%.
Note 2. Pulsed: 1sec, nonârepetitive pulse.
Min Typ Max Unit
â
â
1 mA
â
â
1 mA
800 â
â
V
325 â
â
V
â
â 3.3 V
â
â 2.2 V
15 â
â
â 10 â MHz
4
â
â
A
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