NTE2662 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Frequency, Low Noise RF

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Noise Figure
Reverse Transfer Capacitance
NF V_CE = 1V, I_C = 10mA, f = 2GHz
−
C_RE V_CB = 0.5V, I_E = 0mA, f = MHz, Note 4 −
1.9 2.5 dB
0.6 0.8 pF
Collector Cutoff Current
Emitter Cutoff Current
I_CBO
I_EBO
V_CB = 5V, I_E = 0
V_EB = 1, I_C = 0
− − 600 nA
− − 600 nA
DC Current Gain
h_FE V_CE = 1V, I_C = 5mA, Note 3
100 120 145
Note 3. Pulsed measurement, Pulse Width ≤ 350μs, Duty Cycle ≤ 2%.
Note 4. Collector−to−Base capacitance when the emitter is grounded.
.004
(0.10)
.008 (0.20)
.005 (0.125)
.004
(0.10)
B
C
E
.020
(0.50)
.027
(0.70)
.006 (0.15)
.027 (0.70)
.039 (1.0)
.006 (0.15)
.020 (0.50)
.012
(0.30)
.008 (0.20)
.008 (0.20)
.014 (0.35)
.014 (0.35)
(Bottom View)