NTE2662 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Frequency, Low Noise RF

NTE2662
Silicon NPN Transistor
High Frequency, Low Noise RF
Description:
The NTE2662 is a silicon NPN type transistor in a miniature surface mount package designed for os-
cillator applications up to 3GHz. This device features low voltage operation, low phase noise, and high
immunity to pushing effects.
Features:
D New Miniature Surface Mount Package
− Small Transistor Footprint
− 1.0mm x 0.5mm x 0.5mm
− Low Profile / 0.50mm Package Height
− Flat Lead Style for Better RF Performance
D Ideal for ≤ 3GHz Oscillators
D Low Phase Noise
D Low Pushing Factor
Absolute Maximum Ratings: (T_A = +25°C, Note 1 unless otherwise specified)
Collector−to−Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector−to−Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V
Emitter−to−Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5V
Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (Note 2), P_T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Note 1. Operation in excess of any one of these parameters may result in permanent damage.
Note 2. With device mounted on 1.8cm² x 1.0mm glass epoxy board.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Gain Bandwidth
Insertion Power Gain
f_T V_CE = 1V, f = 2GHz
|S_21E| V_CE = 1V, f = 2GHz,
Note 3
I_C = 5mA 3.0 4.5
I_C = 15mA 5.0 6.5
I_C = 5mA 3.0 4.0
I_C = 15mA 4.5 5.5
− GHz
− GHz
− dB
− dB
Note 3. Pulsed measurement, Pulse Width ≤ 350μs, Duty Cycle ≤ 2%.