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NTE2638 Datasheet, PDF (2/3 Pages) NTE Electronics – Silicon NPN Transistor Darlington
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0, Note 3
400 –
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 3
400 –
Collector–Emitter Sustaining Voltage VCEX(sus) IC = 7A
400 –
Collector Cutoff Current
ICEO VCE = 400V, IB = 0
––
Emitter Cutoff Current
IEBO VEB = 8V, IC = 0
––
DC Current Gain
hFE IC = 2.5A, VCE = 5V, Note 3, Note 4 150 –
IC = 5A, VCE = 5V, Note 3, Note 4 50 –
IC = 7A, VCE = 5V, Note 3, Note 4 15 –
Base–Emitter Voltage
VBE IB = 100mA, IC = 2A, Note 3, Note 4 – –
IB = 250mA, IC = 5A, Note 3, Note 4 – –
Collector–Emitter Saturation
Voltage
VCE(sat) IB = 10mA, IC = 1A, Note 3, Note 4 – –
IB = 100mA, IC = 2A, Note 3, Note 4 – –
IB = 250mA, IC = 5A, Note 3, Note 4 – –
Diode Forward Voltage
VF IF = 7A, Note 3, Note 4
––
Small–Signal Current Gain
hfe VCE = 5V, IC = 500mA, f = 1kHz
200 –
Small–Signal Forward Current
Transfer Ratio
|hfe| VCE = 5V, IC = 500mA, f = 1kHz
10 –
–V
–V
–V
250 µA
15 mA
–
–
–
2.2 V
2.3 V
1.5 V
1.5 V
2.0 V
3.5 V
–
–
Collector Capacitance
Cobo IE = 0, VCB = 10V, f = 1MHz
– – 100 pF
Resistive–Load Switching Characteristics (TC = +25°C unless otherwise specified)
Turn–Off Storage Time
Turn–Off Fall Time
Turn–Off Rise Time
ts IC = 5A, IB1 = 250mA,
tf
IB2 = –250mA, VBE(off) = –7.3V,
RL = 50Ω, Note 5
tr
– 3400 – ns
– 1520 – ns
– 160 – ns
Turn–On Delay Time
td
– 20 – ns
Inductive–Load Switching Characteristics (TC = +25°C unless otherwise specified)
Voltage Storage Time
Current Storage Time
Voltage Rise Time
tsv V(clamp) = Min VCEX(sus), ICM = 5A, – 3900 – ns
tsi
IB1 = 250mA, IB2 = –250mA,
Note 5
– 4700 – ns
trv
– 1200 – ns
Storage Rise Time
tri
– 1200 – ns
Turn–Off Crossover Time
txo
– 2000 – ns
Note 3. These parameters must be measured using pulse techniques, tw = 300µs, duty cycle ≤ 2%.
Note 4. These parameters are measured with voltage–sensing contacts separate from the current–
carrying contacts located within 1/8” (3.2mm) from the device body.
Note 5. Voltage and current values shown are nominal; exact values vary slightly with transistor pa-
rameters.
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