NTE2583 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Speed Switching Regulator

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage
V_(BR)CBO I_C = 1mA, I_E = 0
500 –
–
V
Collector–Emitter Breakdown Voltage V_(BR)CEO I_C = 5mA, R_BE = ∞
400 –
–
V
Emitter–Base Breakdown Voltage
V_(BR)EBO I_E = 1mA, I_C = 0
7
–
–
V
Collector–Emitter Sustaining Voltage V_CEX(sus) I_C = 4.5A, I_B1 = 0.45A, I_B2 = –1.8A, 400 –
–
V
L = 500µH, Clamped
Turn–On Time
Storage Time
Fall Time
t_on
I_C = 7A, I_B1 = 1.4A, I_B2 = 2.8A,
–
– 0.5 µs
t_stg
R_L = 28.6Ω, V_CC = 200V, Note 2
–
– 2.5 µs
t_f
–
– 0.3 µs
Note 2. Pulse Width = 20µs, Duty Cycle ≤ 1%.
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated