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NTE2583 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Speed Switching Regulator | |||
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NTE2583
Silicon NPN Transistor
High Speed Switching Regulator
Features:
D High Breakdown Voltage and High Reliability
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Note 1. Pulse Width ⤠300µs, Duty Cycle ⤠10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
VCB = 400V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 1.6A
VCE = 5V, IC = 8A
Current GainâBandwidth Product
Output Capacitance
CollectorâEmitter Saturation Voltage
fT
Cob
VCE(sat)
VCE = 5V, IC = 10mA
VCE = 10V, IC = 1.6A
VCB = 10V, f = 1MHz
IC = 6A, IB = 1.6A
BaseâEmitter Saturation Voltage
VBE(sat) IC = 6A, IB = 1.6A
Min Typ Max Unit
â
â 10 µA
â
â 10 µA
20 â 50
10 â
â
10 â
â
â 20 â MHz
â 120 â pF
â
â 0.8 V
â
â 1.5 V
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