NTE2581 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Speed Switching Regulator

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
V_(BR)CBO I_C = 1mA, I_E = 0
V_(BR)CEO I_C = 10mA, R_BE = ∞
500 –
–
V
400 –
–
V
Emitter–Base Breakdown Voltage
V_(BR)EBO I_E = 1mA, I_C = 0
7
–
–
V
Collector–Emitter Sustaining Voltage V_CEX(sus) I_C = 6A, I_B1 = 0.6A, I_B2 = –2.4A, 400 –
–
V
L = 500µH, Clamped
Turn–On Time
Storage Time
Fall Time
t_on
I_C = 10A, I_B1 = 2A, I_B2 = –4A,
t_stg
R_L = 20Ω, V_CC = 200V, Note 2
t_f
–
– 0.5 µs
–
– 2.5 µs
–
– 0.3 µs
Note 2. Pulse Width = 20µs, Duty Cycle ≤ 1%.
.147 (3.75)
Dia Max
.420 (10.67)
Max
.110 (2.79)
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab