NTE2581 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Speed Switching Regulator

NTE2581
Silicon NPN Transistor
High Speed Switching Regulator
Features:
D High Breakdown Voltage and High Reliability
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation, P_C
T_A = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W
T_C = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
I_CBO V_CB = 400V, I_E = 0
Emitter Cutoff Current
DC Current Gain
I_EBO
h_FE
V_EB = 5V, I_C = 0
V_CE = 5V, I_C = 1.6A
V_CE = 5V, I_C = 8A
V_CE = 5V, I_C = 10mA
Current Gain–Bandwidth Product
f_T
V_CE = 10V, I_C = 1.6A
Output Capacitance
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
C_ob
V_CE(sat)
V_BE(sat)
V_CB = 10V, f = 1MHz
I_C = 8A, I_B = 1.6A
I_C = 8A, I_B = 1.6A
Min Typ Max Unit
–
– 10 µA
–
– 10 µA
20 – 40
10 –
–
10 –
–
– 20 – MHz
– 160 – pF
–
– 0.8 V
–
– 1.5 V