NTE256 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor Darlington w/Damper Diode

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Base–Emitter Saturation Voltage
DC Current Gain
Diode Forward Voltage
Resistive Switching Times
V_BE(sat)
h_FE
V_F
I_C = 10A, I_B = 0.5A, Note 1
I_C = 18A, I_B = 1.8A, Note 1
I_C = 22A, I_B = 2.2A, Note 1
V_CE = 5V, I_C = 10A
V_CE = 5V, I_C = 18A
I_F = 22A
–
– 2.5 V
–
– 3.0 V
–
– 3.3 V
30 –
–
20 –
–
–
–
4
V
Turn–On Time
Storage Time
Fall Time
Inductive Switching Times
t_on
V_CC = 250V, I_C = 10A, I_B1 = 0.5A,
t_s
V_BE(off) = –5V
t_f
– 0.35 0.6 µs
– 0.8 1.5 µs
– 0.25 0.6 µs
Storage Time
Fall Time
Storage Time
Fall Time
t_s
V_Clamp = 250V, I_C = 10A, I_B1 = 0.5A,
– 0.8 1.5 µs
t_f
V_BE(off) = –5V
– 0.08 0.5 µs
t_s
V_Clamp = 250V, I_C = 20A, I_B1 = 2A,
t_f
V_BE(off) = –5V
– 0.8 1.5 µs
– 0.35 0.7 µs
Note 1. Pulsed: Pulse Width = 300µs, Duty Cycle = 1.5%.
.600
(15.24)
C
.060 (1.52)
.173 (4.4)
.156
(3.96)
Dia.
BCE
.550
(13.97) .430
(10.92)
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
C
B
E
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners