NTE256 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Darlington w/Damper Diode

NTE256
Silicon NPN Transistor
Darlington ^w/Damper Diode
Description:
The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an
integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output
stage in high power, fast switching applications.
Absolute Maximum Ratings:
Collector–Base Voltagte (I_E = 0), V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Collector–Emitter Voltage (I_B = 0), V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage (I_C = 0), V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
Peak (t_p = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Total Power Dissipation (T_C ≤ +25°C), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to + 175°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
I_CEO
I_CEV
V_CEO = 400V, I_B = 0
V_CE = 600V, V_BE = 1.5V, Note 1
V_CE = 600V, V_BE = 1.5V, T_C = +100°C,
Note 1
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
I_EBO
V_CEO(sus)
V_CE(sat)
V_EB = 2V, I_C = 0, Note 1
I_C = 100mA, Note 1
I_C = 10A, I_B = 0.5A
I_C = 18A, I_B = 1.8A
I_C = 22A, I_B = 2.2A
I_C = 28A, I_B = 5.6A
Note 1. Pulsed: Pulse Width = 300µs, Duty Cycle = 1.5%.
Min Typ Max Unit
–
–
1 mA
–
– 100 µA
–
–
2 mA
–
– 175 mA
400 –
–
V
–
– 2.0 V
–
– 2.5 V
–
– 3.0 V
–
– 5.0 V