NTE2503 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Gain Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Saturation Voltage
Base Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Turn–On Time
Storage Time
Fall Time
V_CE(sat) I_C = 500mA, I_B = 10mA
V_BE(sat) I_C = 500mA, I_B = 10mA
V_(BR)CBO I_C = 10µA, I_E = 0
V_(BR)CEO I_C = 1mA, R_BE = ∞
V_(BR)EBO I_E = 10µA, I_C = 0
t_on I_B1 = 100mA,
t_stg
I_B2 = I_C = 300mA,
Pulse Width = 20µs,
t_f
Duty Cycle ≤ 1%
– 0.15 0.50 V
– 0.9 1.2 V
30 – – V
25 – – V
15 – – V
– 0.1 – µs
– 0.6 – µs
– 0.06 – µs
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
ECB
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max