NTE2503 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Gain Switch

NTE2503
Silicon NPN Transistor
High Gain Switch
Features:
D High DC Current Gain
D High Current Capacity
D Low Collector–Emitter Saturation Voltage
D High Emitter–Base Voltage
Applications:
D AF Amplifier
D Various Driver
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Collector Dissipation, P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain–Bandwidth Product
Output Capacitance
I_CBO
I_EBO
h_FE
f_T
C_ob
V_CB = 20V, I_E = 0
V_EB = 10V, I_C = 0
I_C = 50mA, V_CE = 5V
I_C = 500mA, V_CE = 5V
I_C = 50mA, V_CE = 10V
V_CB = 10V, f = 1MHz
Min Typ Max Unit
– – 0.1 µA
– – 0.1 µA
800 1500 3200
600 – –
– 270 – MHz
– 9 – pF