NTE2411 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon PNP Transistor High Voltage Amp/Driver (Compl to NTE2410)

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics
DC Current Gain
h_FE I_C = 1mA, V_CE = 5V
I_C = 10mA, V_CE = 5V
50 –
–
60 – 240
I_C = 50mA, V_CE = 5V
50 –
–
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
V_CE(sat)
V_BE(sat)
I_C = 10mA, I_B = 1mA
I_C = 50mA, I_B = 5mA
I_C = 10mA, I_B = 1mA
–
– 1.0 V
–
– 1.0 V
–
– 1.0 V
I_C = 50mA, I_B = 5mA
–
– 1.0 V
Small–Signal Characteristics
Current Gain–Bandwidth Product
Output Capacitance
Small Signal Current gain
Noise Figure
f_T
I_C = 10mA, V_CE = 10V, f = 100MHz 100 – 300 MHz
C_obo V_CB = 10V, I_E = 0, f = 1MHz
–
–
6 pF
h_fe I_C = 1mA, V_CE = 10V, f = 1kHz
40 – 200
NF I_C = 200µA, V_CE = 5V, R_S = 10Ω,
f = 10Hz to 15.7kHz
–
–
8 dB
.016 (0.48)
C
.098
(2.5)
B
E
Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)