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NTE2411 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon PNP Transistor High Voltage Amp/Driver (Compl to NTE2410) | |||
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NTE2411
Silicon PNP Transistor
High Voltage Amp/Driver
(Compl to NTE2410)
Description:
The NTE2411 is a silicon PNP transistor in an SOTâ23 type surface mount case designed for use in
high voltage applications.
Absolute Maximum Ratings:
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TA = +25°C, FRâ5 Board, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C
Thermal Resistance, JunctionâtoâAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556°C/mW
Total Power Dissipation (TA = +25°C, Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Thermal Resistance, JunctionâtoâAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 417°C/mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Note 1. FRâ5 = 1.0 x 0.75 x 0.62 in.
Note 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorâEmitter Breakdown Voltage
CollectorâBase Breakdown Voltage
EmitterâBase Breakdown Voltage
Collector Cutoff Current
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IC = 1mA, IB = 0
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 100V, IE = 0
VCB = 100V, IE = 0, TA = +100°C
Min Typ Max Unit
150 â
160 â
5
â
â
â
â
â
â
V
â
V
â
V
50 nA
50 µA
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