NTE2410 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411)

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 3)
DC Current Gain
h_FE I_C = 1mA, V_CE = 5V
I_C = 10mA, V_CE = 5V
I_C = 50mA, V_CE = 5V
80 –
–
80 – 250
30 –
–
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
V_CE(sat)
V_BE(sat)
I_C = 10mA, I_B = 1mA
I_C = 50mA, I_B = 5mA
I_C = 10mA, I_B = 1mA
I_C = 50mA, I_B = 5mA
–
– 0.15 V
–
– 0.20 V
–
– 1.0 V
–
– 1.0 V
Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
.016 (0.48)
C
.098
(2.5)
B
E
Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)