NTE2410 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411)

NTE2410
Silicon NPN Transistor
High Voltage Amp/Driver
(Comp to NTE2411)
Description:
The NTE2410 is a silicon NPN transistor in an SOT–23 type surface mount case designed for use
in high voltage applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Power Dissipation (T_A = +25°C, FR–5 Board, Note 1), P_D . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556°C/mW
Total Power Dissipation (T_A = +25°C, Alumina Substrate, Note 2), P_D . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 417°C/mW
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
I_C = 1mA, I_B = 0, Note 3
I_C = 100µA, I_E = 0
I_E = 10µA, I_C = 0
V_CB = 120V, I_E = 0
V_CB = 120V, I_E = 0, T_A = +100°C
Emitter Cutoff Current
I_EBO V_EB = 4V, I_C = 0
Note 3. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
Min Typ Max Unit
160 –
180 –
6
–
–
–
–
–
–
–
–
V
–
V
–
V
50 nA
50 µA
50 nA