NTE2409 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2408)

Electrical Characteristics (Cont’d): (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Base–Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Capacitance
Small–Signal Current Gain
Noise Figure
V_BE(sat)
h_FE
f_T
C_c
h_fe
NF
I_C = 10mA, I_B = 0.5mA, Note 3
I_C = 100mA, I_B = 5mA, Note 3
V_CE = 5V, I_C = 2mA
V_CE = 5V, I_C = 10mA, f = 35MHz
V_CB = 10V, I_E = I_e = 0, f = 1MHz
V_CE = 5V, I_C = 2mA
V_CE = 5V, I_C = 200µA, f = 1kHz,
B = 200Hz, R_S = 2kΩ
– 700 – mV
– 850 – mV
220 – 475
– 150 – MHz
– 4.5 – pF
75 – 900
–
2 10 dB
Note 3. V_BE(sat) decreases by about 1.7mV with increasing temperature.
.016 (0.48)
C
.098
(2.5)
B
E
Max
.074 (1.9)
.118 (3.0) Max
.037 (0.95)
.043 (1.1)
.051
(1.3)
.007 (0.2)