NTE2409 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2408)

NTE2409
Silicon PNP Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2408)
Description:
The NTE2409 is a silicon PNP general purpose transistor in a SOT–23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.
Absolute Maximum Ratings:
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Emitter Voltage, V_CEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Peak Emitter Current, I_EM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Peak Base Current, I_BM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (T_A = +60°C, Note 1), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 ° to +150°C
Thermal Resistance, Junction–to–Tab, R_thJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Thermal Resistance, Tab–to–Soldering Points, R_thTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W
Thermal Resistance, Soldering Points–to–Ambient (Note 1), R_thSA . . . . . . . . . . . . . . . . . . . . 90K/W
Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
I_CBO
V_BE
V_CE(sat)
V_CB = 30V, I_E = 0
V_CB = 30V, I_E = 0, T_J = +150°C
V_CE = 5V, I_C = 2mA, Note 2
V_CE = 5V, I_C = 10mA, Note 2
I_C = 10mA, I_B = 0.5mA, Note 3
I_C = 100mA, I_B = 5mA, Note 3
Min Typ Max Unit
–
1 15 nA
–
–
4 µA
600 650 750 mV
–
– 820 mV
– 75 300 mV
– 250 650 mV
Note 2. V_BE decreases by about 2mV/K with increasing temperature.
Note 3. V_BE(sat) decreases by about 1.7mV with increasing temperature.