NTE2406 Datasheet, PDF (2/3 Pages) NTE Electronics – Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2407)

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
ON Characteristics (Note 3)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small–Signal Characteristics
h_FE V_CE = 10V, I_C = 0.1mA
35 –
V_CE = 10V, I_C = 1mA
50 –
V_CE = 10V, I_C = 10mA
75 –
V_CE = 10V, I_C = 10mA, T_A = –55°C 35
–
V_CE = 1V, I_C = 150mA
50 –
V_CE = 10V, I_C = 150mA
100 –
V_CE = 10V, I_C = 500mA
40 –
V_CE(sat) I_C = 150mA, I_B = 15mA
–
–
I_C = 500mA, I_B = 50mA
–
–
V_BE(sat) I_C = 150mA, I_B = 15mA
0.6 –
I_C = 500mA, I_B = 50mA
–
–
Current Gain–Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small–Signal Current Gain
Output Admittance
Collector–Base Time Constant
Noise Fiqure
Switching Characteristics
f_T
I_C = 20mA, V_CB = 20V, f = 100MHz 300 –
C_obo V_CB = 10V, I_E = 0, f = 1MHz
–
–
C_ibo V_EB = 0.5V, I_C = 0, f = 1MHz
–
–
h_ie V_CE = 10V, I_C = 1mA, f = 1kHz
2
–
V_CE = 10V, I_C = 10mA, f = 1kHz 0.25 –
h_re V_CE = 10V, I_C = 1mA, f = 1kHz
–
–
V_CE = 10V, I_C = 10mA, f = 1kHz
–
–
h_fe V_CE = 10V, I_C = 1mA, f = 1kHz
50 –
V_CE = 10V, I_C = 10mA, f = 1kHz
75 –
h_oe V_CE = 10V, I_C = 1mA, f = 1kHz
5
–
V_CE = 10V, I_C = 10mA, f = 1kHz
25 –
rb’C_c V_CB = 20V, I_E = 20mA, f = 31.8MHz –
–
NF I_C = 100µA, V_CE = 10V,
R_S = 1kΩ,,f = 1kHz
–
–
Delay Time
Rise Time
Storage Time
Fall Time
t_d
V_CC = 30V, I_C = 150mA,
t_r
V_BE(off) = 0.5V, I_B1 = 15mA
t_s
V_CC = 30V, I_C = 150mA,
t_f
I_B1 = I_B2 = 15mA
–
–
–
–
–
–
–
–
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Max Unit
–
–
–
–
–
300
–
0.3 V
1.0 V
1.2 V
2.0 V
– MHz
8
pF
25 pF
8
kΩ
1.25
8
4
kΩ
x 10⁴
x 10⁴
300
375
35 µmhos
200 µmhos
150 ps
4
dB
10 ns
25 ns
225 ns
60 ns