NTE2406 Datasheet, PDF (1/3 Pages) NTE Electronics – Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2407)

NTE2406
Silicon NPN Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2407)
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (FR–5 Board, Note 1), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C
Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), R_thJA . . . . . . . . . . . . . . 556°C/W
Total Device Dissipation (Alumina Substrate, Note 2), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), R_thJA . . . . . . . . 417°C/W
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C
Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEX
I_EBO
I_BL
I_C = 10µA, I_E = 0
I_C = 10mA, I_B = 0
I_E = 10µA, I_C = 0
V_CB = 60V, I_E = 0
V_CB = 60V, I_E = 0, T_A = +125°C
V_CE = 60V, V_EB(off) = 3V
V_EB = 3V, I_C = 0
V_CE = 60V, V_EB(off) = 3V
Min Typ Max Unit
75 –
–
V
40 –
–
V
6
–
–
V
–
– 0.01 µA
–
– 10 µA
–
– 10 nA
–
– 10 nA
–
– 20 nA