NTE2399 Datasheet, PDF (2/3 Pages) NTE Electronics – MOSFET N-Ch, Enhancement Mode High Speed Switch

Electrical Characteristics: (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–to–Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain–to–Source On–Resistance
Gate Threshold Voltage
V_(BR)DSS
∆V_(BR)DSS
∆T_J
R_DS(on)
V_GS(th)
V_GS = 0V, I_D = 250µA
Reference to +25°C, I_D = 1mA
V_GS = 10V, I_D = 1.9A, Note 4
V_DS = V_GS, I_D = 250µA
1000 –
– 1.4
–
V
– V/°C
– – 0.50 Ω
2.0 – 4.0 V
Forward Transconductance
Drain–to–Source Leakage Current
Gate–to–Source Forward Leakage
Gate–to–Source Reverse Leakage
g_fs
V_DS = 100V, I_D = 1.9A, Note4
2.1 – – mhos
I_DSS V_DS = 1000V, V_GS = 0V
– – 100 µA
V_DS = 800V, V_GS = 0V, T_J = +125°C –
– 500 µA
I_GSS V_GS = –20V
– – –100 nA
I_GSS V_GS = 20V
– – 100 nA
Total Gate Charge
Gate–to–Source Charge
Gate–to–Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Q_g
I_D = 3.1A, V_DS = 400V, V_GS = 10V, –
–
80 nC
Q_gs
Note 4
– – 10 nC
Q_gd
– – 42 nC
t_d(on) V_DD = 500V, I_D = 3.1A, R_G = 12Ω, – 12
–
ns
t_r
R_D = 170Ω, Note 4
– 25 – ns
Turn–Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
t_d(off)
– 89 – ns
t_f
– 29 – ns
L_D
Between lead, .250in. (6.0) mm from – 4.5 –
nH
L_S
package and center of die contact
– 7.5 – nH
Input Capacitance
Output Capacitance
Reverse Transfer Capaticance
C_iss
C_oss
C_rss
V_GS = 0V, V_DS = 25V, f = 1MHz
– 980 – pF
– 140 – pF
– 50 – pF
Source–Drain Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
I_S
I_SM Note 1
V_SD T_J = +25°C, I_S = 3.1A, V_GS = 0V,
Note 4
– – 3.1 A
– – 12 A
– – 1.8 V
Reverse Recovery Time
Reverse Recovery Charge
t_rr T_J = +25°C, I_F = 3.1A,
Q_rr ^{di/dt = 100A/µs, Note 4}
– 410 620 ns
– 1.3 2.0 µC
Forward Turn–On Time
t_on Intrinsic turn–on time is neglegible (turn–on is dominated by L_S+L_D)
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 4. Pulse width ≤ 300µs; duty cycle ≤ 2%.