NTE2389 Datasheet, PDF (2/2 Pages) NTE Electronics – MOSFET N-Ch, Enhancement Mode High Speed Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Ratings (Cont’d)
Turn–On Time
Turn–Off Time
Internal Drain Inductance
t_{d (on)}
t_r
t_{d (off)}
t_f
L_d
V_CC = 30V, V_GS = 10V,
I_D = 3A, R_GS = 50Ω
Measured from contact screw
on tab to center of die
– 25 40 ns
– 60 90 ns
– 125 160 ns
– 100 130 ns
– 3.5 – nH
Measured from drain lead 6mm – 4.5 – nH
from package to center of die
Internal Source Inductance
L_s Measured from source lead
6mm from package to source
bond pad
– 7.5 – nH
Reverse Diode
Continuous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Charge
I_DR
I_DRM
V_SD
t_rr
Q_rr
I_F = 41A, V_GS = 0
I_F = 41A, V_GS = 0, V_R = 30V
–di_F/dt = 100A/µs
– – 41 A
– – 164 A
– 1.4 2.0 V
– 60 – ns
– 0.3 – µC
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Gate
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Source
Drain/Tab