NTE2389 Datasheet, PDF (1/2 Pages) NTE Electronics – MOSFET N-Ch, Enhancement Mode High Speed Switch

NTE2389
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Drain–Source Voltage, V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain–Gate Voltage (R_GS = 20kΩ), V_DGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain Current, I_D
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152A
Gate–Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Maximum Power Dissipation, P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C
Maximum Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2°C/W
Typical Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Ratings
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate–Source Leakage Current
Drain–Source On–State Resistance
Dynamic Ratings
BV_DSS
V_GS(th)
I_DSS
I_GSS
R_DS(on)
I_D = 0.25mA, V_GS = 0
I_D = 1mA, V_DS = V_GS
V_DS = 60V,
V_GS = 0
T_J = +25°C
T_J = +125°C
V_GS = ±30V, V_DS = 0
I_D = 20A, V_GS = 10V
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
g_fs
C_iss
C_oss
C_rss
I_D = 20A, V_DS = 25V
V_DS = 25V, V_GS = 0, f = 1MHz
Min Typ Max Unit
60 – – V
2.1 3.0 4.0 V
– 1 10 µA
– 0.1 1.0 mA
– 10 100 nA
– 40 45 mΩ
8 13.5 – mhos
– 1650 2000 pF
– 560 750 pF
– 300 400 pF