NTE2384 Datasheet, PDF (2/2 Pages) NTE Electronics – MOSFET N-Channel Enhancement Mode, High Speed Switch

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics (Cont’d)
Internal Drain Inductance
L_D
Measured from contact screw on –
5.0
–
nH
header closer to source pin and
center of die
Internal Source Inductance
L_S Measured from the source lead
6mm from package to source
bonding pad
– 12.5 – nH
Source–Drain Diode Ratings and Characteristics
Continuous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovered Charge
I_DR
I_DRM
V_SD
t_rr
Q_rr
T_C = +25°C
T_C = +25°C
I_F = 12A, V_GS = 0, T_J = +25°C
I_F = 6A, T_J = +25°C
V_GS = 0, V_R = 100V, T_J = +25°C,
di_F/dt = 100A/µs,
–
–
6
A
–
–
24 A
– 1.1 1.5 V
– 1800 – ns
–
25
– µC
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Source
.215 (5.45)
.430
(10.92)
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Gate
.525 (13.35) R Max
Drain/Case