NTE2384 Datasheet, PDF (1/2 Pages) NTE Electronics – MOSFET N-Channel Enhancement Mode, High Speed Switch

NTE2384
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Drain–Gate Voltage (R_GS = 20kΩ), V_DGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Gate–Source Voltage, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Pulsed Drain Current (T_C = +25°C), I_DM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A
Continuous Drain Current, I_D
T_C = +30°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0A
T_C = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A
Total Dissipation (T_C = +25°C), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W
Typical Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Drain–Source Breakdown Voltage
Zero–Gate Voltage Drain Current
Gate–Body Leakage Current
Gate Threshold Voltage
Static Drain–Source On Resistance
Dynamic Characteristics
V_(BR)DSS
I_DSS
I_GSS
V_GS(th)
R_DS(on)
I_D = 250µA, V_GS = 0
V_GS = 0, V_DS = 800V, T_J = +25°C
V_GS = 0, V_DS = 800V, T_J = +125°C
V_DS = 0, V_GS = ±20V
V_DS = V_GS, I_D = 1mA
V_GS = 10V, I_D = 3A
Forward Transconductance
Input Capactiance
Output Capacitance
Reverse Transfer Capactiance
Turn–On Time
Rise Time
Turn–Off Delay Time
Fall Time
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
V_DS = 25V, I_D = 3A
V_DS = 25V, V_GS = 0, f = 1MHz
V_DD = 30V, I_D = 2.6A, V_GS = 10V,
R_GS = 50Ω, R_gen = 50Ω
Min Typ Max Unit
800 –
–
V
–
20 250 µA
– 0.1 1.0 mA
–
10 100 nA
2.1 3.0 4.0 V
– 1.3 1.5 Ω
1.8 3.0 – mho
– 3900 5000 pf
– 200 350 pf
–
80 140 pf
–
60 90 ns
–
90 140 ns
– 330 430 ns
– 110 140 ns