NTE2378 Datasheet, PDF (2/2 Pages) NTE Electronics – MOSFET N-Channel Enhancement Mode, High Speed Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Input Capactiance
C_iss
– 700
Output Capacitance
Reverse Transfer Capactiance
C_oss
C_rss
V_DS = 20V, f = 1MHz
– 300
– 170
Turn–On Time
t_d(on)
– 15
Rise Time
Turn–Off Delay Time
t_r
t_d(off)
V_DD = 200V, I_D = 2A,
V_GS = 10V, R_GS = 50Ω
– 35
– 200
Fall Time
t_f
– 65
Diode Forward Voltage
V_SD I_S = 5A, V_GS = 0
–
–
Max Unit
– pf
– pf
– pf
– ns
– ns
– ns
– ns
1.8 V
.190 (4.82)
.787
(20.0)
.615 (15.62)
D
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
G DS
.215 (5.47)