NTE2378 Datasheet, PDF (1/2 Pages) NTE Electronics – MOSFET N-Channel Enhancement Mode, High Speed Switch

NTE2378
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Description:
The NTE2378 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D Low ON–State Resistance
D Very High–Speed Switching
D Converters
Absolute Maximum Ratings: (T_A = +25°C)
Drain–Source Voltage, V_DSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate–Source Voltage, V_GSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
DC Drain Current, I_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Pulsed Drain Current (Note 1), I_DP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Allowable Power Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W
Maximum Channel Temperature, T_ch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width ≤ 10µs, Duty Cycle ≤ 1%.
Note 2. Be careful in handling the NTE2378 because it has no protection diode between gate and
source.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage V_(BR)DSS I_D = 1mA, V_GS = 0
Zero–Gate Voltage Drain Current
I_DSS V_GS = 0, V_DS = 900V
Gate–Source Leakage Current
I_GSS V_DS = 0, V_GS = ±30V
Cutoff Voltage
V_GS(off) V_DS = 10V, I_D = 1mA
Static Drain–Source On Resistance R_DS(on) V_GS = 10V, I_D = 2A
Forward Transconductance
g_fs V_DS = 20V, I_D = 2A
Min Typ Max Unit
900 –
–V
–
– 1.0 mA
–
– ±100 nA
2
–
3V
– 2.8 3.6 Ω
1.0 2.0 – mho