NTE2377 Datasheet, PDF (2/2 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode, High Speed

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Input Capactiance
C_iss
– 1600 – pf
Output Capacitance
Reverse Transfer Capactiance
C_oss
C_rss
V_DS = 20V, f = 1MHz
– 500 – pf
– 350 – pf
Turn–On Time
t_d(on)
– 20 – ns
Rise Time
Turn–Off Delay Time
t_r
t_d(off)
V_DD = 200V, I_D = 4A,
V_GS = 10V, R_GS = 50Ω
– 80 – ns
– 350 – ns
Fall Time
t_f
– 150 – ns
Diode Forward Voltage
V_SD I_S = 8A, V_GS = 0
–
– 1.8 V
.190 (4.82)
.787
(20.0)
.615 (15.62)
D
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
G DS
.215 (5.47)