NTE2377 Datasheet, PDF (1/2 Pages) NTE Electronics – MOSFET N-Channel, Enhancement Mode, High Speed

NTE2377
MOSFET
N–Channel,
Enhancement Mode, High Speed
Description:
The NTE2377 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive
and very fast switching times make this device ideal for high speed switching applications. Typical
applications include switching mode power supplies, uninterruptible power supplies, and motor
speed control.
Features:
D Low ON–State Resistance
D Very High–Speed Switching
D Converters
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Drain–Source Voltage, V_DSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate–Source Voltage, V_GSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
DC Drain Current, I_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Pulsed Drain Current (Note 1), I_DP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
Allowable Power Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Maximum Channel Temperature, T_ch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Width ≤ 10µs, Duty Cycle ≤ 1%.
Note 2. Be careful in handling the NTE2377 because it has no protection diode between gate and
source.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain–Source Breakdown Voltage V_(BR)DSS I_D = 1mA, V_GS = 0
Zero–Gate Voltage Drain Current
I_DSS V_GS = 0, V_DS = Max Rating
Gate–Source Leakage Current
I_GSS V_DS = 0, V_GS = ±30V
Cutoff Voltage
V_GS(off) V_DS = 10V, I_D = 1mA
Static Drain–Source On Resistance R_DS(on) V_GS = 10V, I_D = 4A
Forward Transconductance
g_fs V_DS = 20V, I_D = 4A
Min Typ Max Unit
900 –
–V
–
– 1.0 mA
–
– ±100 nA
2
–
3V
– 1.2 1.6 Ω
2.5 5.0 – mho