NTE2345 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors General Purpose Darlington, Power Amplifier

Electrical Characteristics (Cont’d): (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
Small–Signal Current Gain
Cut–Off Frequency
Diode, Forward Voltage
Second Breakdown Collector Current
Non–Repetitive, without Heatsink
V_BE
V_CE(sat)
h_fe
f_hfe
V_F
I_(SB)
I_C = 3A, V_CEO = 3V, Note 2
I_C = 3A, I_B = 12mA
I_C = 3A, V_CEO = 3V, f = 1MHz
I_C = 3A, V_CEO = 3V
I_F = 3A
V_CEO = 60V, t_p = 25ms
2.5 –
2.0 –
10
–
– 100
– 1.8
1
–
–V
–V
–
– kHz
–V
–A
Turn–On Time
Turn–Off Time
t_on
I_C(on) = 3A, I_B(on) = I_B(off) = 12mA
t_off
I_C(on) = 3A, I_B(on) = I_B(off) = 12mA
–
1
2 µs
–
5
10 µs
Note 2. V_BE decreases by about 3.8mV/K with increasing temperature.
Schematic Diagram
C
C
B
B
NPN
E
.307 (7.8)
Max
.100 (2.54)
.118 (3.0)
Min
.147
(3.75)
.437
(11.1)
Max
BC E
.100 (2.54)
.602
(15.3)
Min
E
PNP
See Note
.090 (2.29)
.047 (1.2)
Note: Collector connected to metal part of mounting surface.