NTE2345 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors General Purpose Darlington, Power Amplifier

NTE2345 (NPN) & NTE2346 (PNP)
Silicon Complementary Transistors
General Purpose Darlington, Power Amplifier
Description:
The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an
SOT–82 type package designed for use in audio output stages and general amplifier and switching
applications..
Features:
D High DC Current Gain: h_FE = 750 (Min) @ I_C = 3A, V_CE = 3V
D Junction Temperature to +150°C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak (t_p ≤ 10ms, δ ≤ 0.1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Total Power Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.08K/W
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100K/W
Electrical Characteristics: (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
I_CBO
I_CEO
I_E = 0, V_CBO = 120V
I_E = 0, V_CBO = 120V, T_J = +150°C
I_B = 0, V_CEO = 60V
Emitter Cutoff Current
I_EBO I_C = 0, V_EBO = 5V
DC Current Gain
h_FE I_C = 500mA, V_CEO = 3V, Note 1
I_C = 3A, V_CEO = 3V, Note 1
I_C = 6A, V_CEO = 3V, Note 1
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
–
– 0.2 mA
–
– 2mA mA
–
– 0.5 mA
–
–
5 mA
– 2700 –
750 –
–
– 400 –