NTE2334 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor Darlington Driver w/Internal Damper and Zener Diode

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Unclamped Inductive Load Energy
Turn–On Time
Storage Time
Fall Time
V_CE(sat)
V_BE(sat)
V_(BR)CBO
V_(BR)CEO
E_s/b
t_on
t_stg
t_f
I_C = 2.5A, I_B = 5mA
I_C = 2.5A, I_B = 5mA
I_C = 5mA, I_E = 0
I_C = 50mA, R_BE = ∞
L = 100mH, R_BE = 100Ω
V_CC = 20V, I_C = 3A,
I_B1 = –I_B2 = 6mA
– 0.9 1.5 V
– – 2.0 V
50 60 70 V
50 60 70 V
50 – – mJ
– 0.6 – µs
– 4.0 – µs
– 1.5 – µs
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
C
Dia Max
B
.500
(12.7)
Max
E
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab