NTE2334 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor Darlington Driver w/Internal Damper and Zener Diode

NTE2334
Silicon NPN Transistor
Darlington Driver ^w/Internal Damper
and Zener Diode
Description:
The NTE2334 is a silicon Darlington NPN Driver with an internal damper and zener diode in a TO220
type package designed for use in applications such as the switching of the L load of a motor driver,
hammer driver, relay driver, etc.
Features:
D High DC Current Gain
D Large Current Capacity and Wide ASO
D Contains 60 ±10V Avalanche Diode between Collector and Base
D High 50mJ Reverse Energy Rating
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector to Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Collector to Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Emitter to Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Collector Power Dissipation (T_C = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
I_CBO
I_EBO
h_FE
f_T
V_BE = 40V, I_E = 0
V_EB = 5V, I_C = 0
V_CE = 3V, I_C = 2.5A
V_CE = 5V, I_C = 2.5A
Min Typ Max Unit
– – 100 µA
– – 3 mA
1000 4000 –
– 20 – MHz