NTE232 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon PNP Transistor Darlington Amplifier, Preamp

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics
Current Gain–Bandwidth Product
f_T I_C = 30mA, V_CE = 10V, f =
50MHz
100 125 – MHz
Output Capacitance
Noise Figure
C_cb I_CB = 10mA, I_E = 0, f = 100MHz – 2.5 – pF
NF I_C = 1mA, V_CE = 5V, R_S = 100kΩ, – 2 – dB
f = 1kHz
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
EBC
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max