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| NTE232 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon PNP Transistor Darlington Amplifier, Preamp | |||
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NTE232
Silicon PNP Transistor
Darlington Amplifier, Preamp
Description:
The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type pack-
age designed for preamplifier input applications where high impedance is a requirement.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
CollectorâEmitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
EmitterâBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
CollectorâBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C
Total Power Dissipation (TC = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C
Operating Junction Temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Lead Temperature (During Soldering, 1/16â ±1/32â from case, 10sec), TL . . . . . . . . . . . . . . . +230°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Static Characteristics
CollectorâEmitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Forward Current Transfer Ratio
CollectorâEmitter Saturation Voltage
BaseâEmitter ON Voltage
V(BR)CES
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
IC = 100µA, IB = 0
VCB = 30V, IE = 0
VBE = 8V, IC = 0
IC = 10mA, VCE = 5V
IC = 100mA, VCE = 5V
IC = 100mA, IB = 0.1mA
IC = 100mA, VCE = 5V, Note 1
Note 1. Pulse Test: Pulse Width ⤠300µs, Duty Cycle ⤠2%.
Min Typ Max Unit
30 â â V
â â 100 nA
â â 100 nA
50k â â
20k â â
â 0.9 1.5 V
â 1.45 2.00 V
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