NTE2313 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Speed Switch

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
h_FE I_C = 0.1A, V_CE = 5V
V_CE(sat) I_C = 0.3A, I_B = 30mA
30 50 –
–
– 0.8 V
Base–Emitter Saturation Voltage
Dynamic Characteristics
I_C = 1A, I_B = 200mA
V_BE(sat) I_C = 1A, I_B = 0.2A
–
– 1.0 V
–
– 1.1 V
Current–Gain Bandwidth Product
f_T
I_C = 500mA, V_CE = 10V, f = 1MHz 4
–
– MHz
Switching Characteristics
Turn–On Time
Storage Time
Fall Time
t_on V_CC = 250V, I_C = 1A, I_B1 = 0.2A,
t_s
I_B2 = 0.4A
t_f
– 0.3 0.5 µs
– 2.0 3.5 µs
– 0.3 – µs
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab