NTE2313 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Speed Switch

NTE2313
Silicon NPN Transistor
High Speed Switch
Description:
The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO220
type package designed for use in converters, inverters, switching regulators, motor control systems,
and switching applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector–Emitter Voltage, V_CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Base Current, I_B
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Reverse Base Current, –I_BM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Power Dissipation (T_C = +25°C), P_tot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Thermal Resistance, Junction–to–Ambient, R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Lead Temperature (During Soldering, 1/8” from case, 5sec), T_L . . . . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage V_CEO(sus) I_C = 100mA, L = 25mH
Collector Cutoff Current
Emitter Cutoff Current
I_CES
I_EBO
V_CS = 1000V
V_CS = 1000V, T_C = +125°C
I_C = 0, V_EB = 5V
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
450 –
–
V
–
– 0.2 mA
–
– 1.5 mA
–
–
1 mA