NTE2311 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Speed Switch

Electrical Characteristics (Cont’d): (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics (Cont,d)
Emitter Cutoff Current
ON Characteristics (Note 1)
I_EBO I_C = 0, V_BE = –5V
– – 1 mA
DC Current Gain
h_FE I_C = 8Adc, V_CE = 5Vdc)
Collector–Emitter Saturation Voltage V_CE(sat) I_C = 8A, I_B = 1.6A
I_C = 12A, I_B = 2.4A
Base–Emitter Saturation Voltage
V_BE(sat) I_C = 8A, I_B = 1.6A
Switching Characteristics (Switching Times on Resistive Load)
10 – – –
– – 1.5 V
– – 5.0 V
– – 1.6 V
Turn–On Time
Storage Time
t_on V_CC = 150V, I_C = 8A,
t_s
I_B1 = –I_B2 = 1.6A
Fall Time
t_f
Switching Characteristics (Switching Times on Inductive Load)
– 0.55 1.0 µs
– 1.5 3.0 µs
– 0.3 0.8 µs
Storage Time
Fall Time
t_s
T_J = +25°C V_CC = 300V,
T_J = +125°C
V_BB = –5V,
L_B = 3µH,
t_f
T_J = +25°C I_C = 8A,
T_J = +125°C ^{IBend = 1.6A}
Note 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
– 3.5 – µs
– – 5.0 µs
– 0.08 – µs
– – 0.4 µs
.600
(15.24)
C
.060 (1.52)
.173 (4.4)
.156
(3.96)
Dia.
BCE
.550
(13.97) .430
(10.92)
.500
(12.7)
Min
.055 (1.4)
.216 (5.45)
.015 (0.39)
NOTE: Dotted line indicates that
case may have square corners