NTE2311 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Speed Switch

NTE2311
Silicon NPN Transistor
High Voltage, High Speed Switch
Description:
The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high
speed switching applications.
Features:
D High Blocking Capability: V_CEX = 1000V
D Wide Surge Area: I_CSM = 55A @ 350V
Applications:
D Switchmode Power Supply
D DC/DC and DC/AC Converters
D Motor Control
Absolute Maximum Ratings: (T_C = +25°C unless otherwise specified)
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Collector–Emitter Voltage (V_BE = –2.5V), V_CEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current (t_p ≤ 5ms), I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current (t_p ≤ 5ms), I_B
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Power Dissipation, P_tot
T_C = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
T_C = +60°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1°C/W
Electrical Characteristics: (T_J = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Sustaining Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V_CEO(sus)
V_(BR)EBO
I_CEX
I_CER
I_B = 0, I_C = 200mA, L = 25mH
I_C = 0, I_E = 50mA
T_J = +25°C V_CE = V_CEX,
T_J = +125°C ^{VBE = –2.5V}
T_J = +25°C V_CE = V_CEX,
T_J = +125°C ^{RBE = 10Ω}
Min Typ Max Unit
450 – – V
7 – 30 V
– – 0.2 mA
– – 2.0 mA
– – 0.5 mA
– – 4.0 mA