NTE2309 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Current Switch

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector–Base Breakdown Voltage V_(BR)CBO I_C = 1mA, I_E = 0
900 –
–
V
Collector–Emitter Breakdown Voltage V_(BR)CBO I_C = 5mA, R_BE = ∞
800 –
–
V
Emitter–Base Breakdown Voltage
V_(BR)EBO I_E = 1mA, I_C = 0
7
–
–
V
Collector–Emitter Sustaining Voltage V_CEO(sus) I_C = 6A, I_B = 2A, L = 200µH
800 –
–
V
V_CEX(sus) I_C = 2A, I_B1 = 0.4A, L= 1mH,
I_B2 = –0.4A, Clamped
800 –
–
V
I_C = 1A, I_B1 = 0.2A, L= 2mH,
I_B2 = –0.2A, Clamped
900 –
–
V
Turn–On Time
Storage Time
t_on
V_CC = 400V, I_C = 4A, I_B1 = 0.8A,
–
– 1.0 µs
t_stg
I_B2 = –1.6A, R_L = 100Ω
–
– 3.0 µs
Fall Time
t_f
–
– 0.7 µs
.190 (4.82)
.615 (15.62)
.787
(20.0)
C
.591
(15.02)
.126
(3.22)
Dia
.787
(20.0)
B
C
E
.215 (5.47)