NTE2309 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage, High Current Switch

NTE2309
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D High Breakdown Voltage
D Fast Switching Speed
D Wide ASO
Absolute Maximum Ratings: (T_A = +25°C unless otherwise specified)
Collector–Base Voltage, V_CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter–Base Voltage, V_EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Dissipation (T_A = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Collector Dissipation (T_C = +25°C), P_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pules test: Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
I_CBO
I_EBO
h_FE
V_CB = 400V, I_E = 0
V_EB = 5V, I_C = 0
V_CE = 5V, I_C = 0.4A
Current Gain–Bandwidth Product
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
f_T
V_CE(sat)
V_BE(sat)
V_CE = 5V, I_C = 2A
V_CE = 10V, I_C = 0.4A
I_C = 3A, I_B = 0.6A
I_C = 3A, I_B = 0.6A
Output Capacitance
C_ob V_CB = 10V, f = 1MHz
Min Typ Max Unit
–
– 10 µA
–
– 10 µA
10 –
–
8
–
–
– 15 – MHz
–
– 2.0 V
–
– 1.5 V
– 120 – pF