NTE222 Datasheet, PDF (2/2 Pages) NTE Electronics – Field Effect Transistor Dual Gate N-Channel MOSFET

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Small–Signal Characteristics (Cont’d)
Input Capacitance
C_iss V_DS = 15V, V_G2S = 4V, I_D = I_DSS,
f = 1MHz
– 3.3 –
Reverse Transfer Capacitance
C_rss V_DS = 15V, V_G2S = 4V, I_D = 10mA, 0.005 – 0.03
f = 1MHz
Output Capacitance
C_oss
V_DS = 15V, V_G2S = 4V, I_D = I_DSS,
f = 1MHz
– 1.4 –
Functional Characteristics
Noise Figure
NF V_DD = 18V, V_GG = 7V, f = 200MHz –
V_DD = 15V, V_G2S = 4V, I_D = 10mA, –
f = 200MHz
– 3.5
– 5.0
Common Source Power Gain
G_ps V_DD = 18V, V_GG = 7V, f = 200MHz 20
–
28
V_DD = 15V, V_G2S = 4V, I_D = 10mA, 14
–
–
f = 200MHz
Bandwidth
Gain Contol Gate–Supply Voltage
BW V_DD = 18V, V_GG = 7V, f = 200MHz 7
V_DD = 18V, f_LO = 245MHz,
4
f_RF = 200MHz, Note 5
V_GG(GC) V_DD = 18V, ∆G_ps = 300dB,
0
f = 200MHz, Note 4
– 12
–
7
– –2.0
Unit
pF
pF
pF
dB
dB
dB
dB
MHz
MHz
V
Note 4. ∆G_ps is defined as the change in G_ps from the value at V_GG = 7V.
Note 5. Amplitude at input from local oscillator is 3V RMS.
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
.018 (0.45) Dia
Drain
Gate 2
Gate 1
45°
.040 (1.02)
Source/Case