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NTE222 Datasheet, PDF (1/2 Pages) NTE Electronics – Field Effect Transistor Dual Gate N-Channel MOSFET | |||
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NTE222
Field Effect Transistor
Dual Gate NâChannel MOSFET
Absolute Maximum Ratings:
DrainâSource Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
DrainâGate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Reverse Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â10mA
Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â65° to +175°C
Lead Temperature (During Soldering), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
DrainâSource Breakdown Voltage V(BR)DSX ID = 10µA, VG1 = VG2 = â5V
25 â
â
V
Gate 1âSource Breakdown Voltage V(BR)G1SO IG1 = ±10mA, Note 1
±6 â ±30 V
Gate 2âSource Breakdown Voltage V(BR)G2SO IG2 = ±10mA, Note 1
±6 â ±30 V
Gate 1 Leakage Current
IG1SS VG1S = ±5V, VG2S = VDS = 0
â
â ±10 nA
Gate 2 Leakage Current
IG2SS VG2S = ±5V, VG1S = VDS = 0
â
â ±10 nA
Gate 1 to Source Cutoff Voltage
VG1S(off) VDS = 15V, VG2S = 4V, ID = 20µA â0.5 â â4.0
V
Gate 2 to Source Cutoff Voltage
VG2S(off) VDS = 15V, VG1S = 0V, ID = 20µA â0.2 â â4.0
V
ON Characteristics (Note 2)
ZeroâGateâVoltage Drain Current
SmallâSignal Characteristics
IDSS VDS = 15V, VG2S = 4V, VG1S = 0V 6
â 30 mA
Forward Transfer Admittance
|Yfs| VDS = 15V, VG2S = 4V, VG1S = 0V, 10
â
22 mmhos
f = 1kHz, Note 3
Note 1. All gated breakdown voltages are measured while the device is conducting rated gate cur-
rent. This insures that the gate voltage limiting network is functioning properly.
Note 2. Pulse Test: Pulse Width = 30µs, Duty Cycle ⤠2%.
Note 3. This parameter must be measured with bias voltages applied for less than five (5) seconds
to avoid overheating.
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