NTE196 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors Audio Power Output and Medium Power Switching

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Dynamic Characteristics
h_FE
V_CE(sat)
V_BE(on)
I_C = 2A, V_CE = 4V
I_C = 7A, V_CE = 4V
I_C = 7A, I_B = 3A
I_C = 7A, V_CE = 4V
30 – 150
2.3 – –
– – 3.5 V
– – 3.0 V
Current–Gain Bandwidth Product
NTE196
NTE197
f_T
I_C = 500mA, V_CE = 4V, f_test = 1MHz,
4 – – MHz
Note 2
10 – – MHz
Output Capacitance
Small–Signal Current Gain
C_ob V_CB = 10V, I_E = 0, f = 1MHz
h_fe I_C = 500mA, V_CE = 4V, f = 50kHz
– – 250 pF
20 – –
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. f_T = |h_fe|  f_test
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab