NTE196 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors Audio Power Output and Medium Power Switching

NTE196 (NPN) & NTE197 (PNP)
Silicon Complementary Transistors
Audio Power Output and Medium Power Switching
Description:
The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack-
age designed for use in general purpose amplifier and switching applications.
Features:
D DC Current Gain Specified to 7 Amps: h_FE = 2.3 Min @ I_C = 7A
D Collector–Emitter Sustaining Voltage: V_CEO(sus) = 70V Min
D High Current–Gain Bandwidth Product:
f_T = 4MHz Min @ I_C = 500mA (NTE196)
= 10MHz Min @ I_C = 500mA (NTE197)
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector–Base Voltage, V_CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, V_EB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I_C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Base Current, I_B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Total Power Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125°C/W
Electrical Characteristics: (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V_CEO(sus) I_C = 100mA, I_B = 0, Note 1
70
Collector Cutoff Current
I_CEO V_CE = 60V, I_B = 0
–
I_CEX V_CE = 80V, V_EB(off) = 1.5V
–
V_CE = 80V, V_EB(off) = 1.5V, T_C = +150°C –
Emitter Cutoff Current
I_EBO V_BE = 5V, I_C = 0
–
––V
– 1.0 mA
– 100 µA
– 2.0 mA
– 1.0 mA
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.