NTE191 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Complementary Transistors High Voltage Video Amplifier

Electrical Characteristics (Cont’d): (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
OFF Characteristics (Cont’d)
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
I_CBO
I_EBO
V_CB = 200V, I_E = 0
V_BE = 6V, I_C = 0
– – 0.2
– – 0.1
DC Current Gain (NTE191 & NTE240)
NTE191
NTE240
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
NTE191
NTE240
h_FE
V_CE(sat)
V_BE(on)
I_C = 1mA, V_CE = 10V, Note 3
I_C = 10mA, V_CE = 10V, Note 3
I_C = 30mA, V_CE = 10V, Note 3
I_C = 10mA, V_CE = 10V, Note 3
I_C = 30mA, V_CE = 10V, Note 3
I_C = 30mA, I_B = 3mA
I_C = 30mA, V_CE = 10V
25 – –
40 – –
40 – –
30 – –
30 – –
– – 0.75
– – 0.85
– – 0.90
Dynamic Characteristics
Current Gain–Bandwidth Product
NTE191
NTE240
f_T
I_C = 10mA, V_CE = 20V,
f = 100MHz, Note 2
45 – –
60 – –
Collector–Base Capacitance
NTE191
NTE240
C_cb
V_CB = 20V, I_E = 0, f = 1MHz
– – 3.0
– – 8.0
Unit
µA
µA
V
V
V
MHz
MHz
pF
pF
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.160
(4.06)
.100 (2.54)
.380 (9.65) Max
.050 (1.27)
.280 (7.25) Max
.128 (3.28) Dia
.218
(5.55)
.475
(12.0)
Min
EBC
.995
(25.3)
.100 (2.54)
.200 (5.08)
Collector Connected to Tab