NTE191 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Complementary Transistors High Voltage Video Amplifier

NTE191 (NPN) & NTE240 (PNP)
Silicon Complementary Transistors
High Voltage Video Amplifier
Description:
The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type
package designed for high–voltage video and luminance output stages in TV receivers.
Features:
D High Collector–Emitter Breakdown Voltage: V_(BR)CEO = 300V (Min) @ I_C = 1mA
D Low Collector–Emitter Saturation Voltage: V_CE(sat) = 0.75V (Max) @ I_C = 30mA
D Low Collector–Base Capacitance: C_cb = 3pF (Max) @ V_CB = 20V
Absolute Maximum Ratings:
Collector–Emitter Voltage, V_CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Base Voltage, V_CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, V_EBO
NTE191 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
NTE240 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, I_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T_A = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
Total Device Dissipation (T_C = +25°C), P_D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, T_J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, R_thJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Thermal Resistance, Junction–to–Ambient (Note 2), R_thJA . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Note 1. NTE191 is a discontinued device and no longer available.
Note 2. R_thJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (T_A = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
NTE191
NTE240
V_(BR)CEO I_C = 1mA, I_B = 0, Note 3
V_(BR)CBO I_C = 100µA, I_E = 0
V_(BR)EBO
I_E = 100µA, I_C = 0
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
300 – –
V
300 – –
V
6––
V
5––
V