NTE190 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage Amplifier

Electrical Characteristics (Cont’d): (T_C = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
Base–Emitter ON Voltage
Collector–Emitter Saturation Voltage
Dynamic Characteristics
h_FE
V_BE(on)
V_CE(sat)
I_C = 10mA, V_CE = 10V
I_C = 200mA, V_CE = 1V
I_C = 200mA, I_B = 20mA
40 – –
– – 1.0 V
– – 0.5 V
Current Gain–Bandwidth Product
f_T I_C = 50mA, V_CE = 20V,
f = 20MHz
35 – – MHz
Output Capacitance
Input Capacitance
C_ob V_CB = 10V, I_E = 0, f = 100kHz
– – 12 pF
C_ib V_BE = 0.5V, I_C = 0, f = 100kHz – – 110 pF
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
.160
(4.06)
.100 (2.54)
.380 (9.65) Max
.050 (1.27)
.280 (7.25) Max
.128 (3.28) Dia
.218
(5.55)
.475
(12.0)
Min
EBC
.995
(25.3)
.100 (2.54)
.200 (5.08)
Collector Connected to Tab