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NTE190 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon NPN Transistor High Voltage Amplifier | |||
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NTE190
Silicon NPN Transistor
High Voltage Amplifier
Description:
The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applica-
tions, high voltage linear amplifiers, and high voltage transistor regulators.
Features:
D High CollectorâEmitter Breakdown Voltage: V(BR)CEO = 180V (Min) @ IC = 1mA
D Low CollectorâEmitter Saturation Voltatge: VCE(sat) = 0.5V (Max) @ IC = 200mA
D High Power Dissipation: PD = 10W @ TC = +25°C
Absolute Maximum Ratings:
CollectorâEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
CollectorâBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
EmitterâBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . â55° to +150°C
Lead Temperature (During Soldering, 1/16â from case for 10sec), TL . . . . . . . . . . . . . . . . . . . +260°C
Thermal Resistance, JunctionâtoâAmbient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, JunctionâtoâCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorâEmitter Breakdown Voltage
CollectorâBase Breakdown Voltage
EmitterâBase Breakdown Voltage
Collector Cutoff Current
V(BR)CEO IC = 1mA, IB = 0
V(BR)CBO IC = 100µA, IE = 0
V(BR)EBO IE = 100µA, IC = 0
ICBO VCB = 150V, IE = 0
Min Typ Max Unit
180 â â V
180 â â V
5ââV
â â 0.1 mA
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