NTE180 Datasheet, PDF (2/2 Pages) NTE Electronics – Silicon Power Transistor High Power Audio Amplifier

Electrical Characteristics (Cont’d): (T_C =+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
Base–Emitter ON Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
h_FE
V_BE(on)
V_CE(sat)
V_BE(sat)
I_C = 7.5A, V_CE = 2V
I_C = 7.5A, V_CE = 2V
I_C = 7.5A, I_B = 750mA
I_C = 7.5A, I_B = 750mA
25 – 100
– – 1.3 V
– – 0.8 V
– – 1.3 V
Current Gain–Bandwidth Product
f_T I_C = 1A, V_CE = 10V, f = 1MHz 2.0 – – MHz
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
Note 2. NTE181MP is a matched pair of NTE181 with their DC Current Gain (h_FE) matched to within
10% of each other.
Note 3. NTE180MCP is a matched complementary pair containing 1 each of NTE180 (PNP) and
NTE181 (NPN).
.350 (8.89)
.135 (3.45) Max
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
.040 (1.02)
Emitter
1.187 (30.16)
.215 (5.45)
.430
(10.92)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case